In a time period where the cost at retail, of DDR3 DRAM has increased roughly $7 per gigabyte in 4 weeks, it is more than welcome news to hear about new process RAM that is not only more energy efficient, but going to be substantially less expensive.
Now there is some hope of prices receding this year, both because of increased supply, and manufacturing efficiencies.
Samsung Electronics has proudly announced that it has managed to make the first-ever 30nm DRAM, a DDR3 memory chip with a density of 2Gb (gigabits). According to the South Korean company, the use of 30nm technology increases DDR3 productivity by 60% when compared to 40nm, and doubles production cost-efficiency over 50nm/60nm manufacturing.
“Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market,” said Soo-In Cho, president, Memory Division, Samsung Electronics. “Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems.”
Samsung’s new 30nm-made 2Gb DRAM cuts power consumption by up to 30% over 50nm DRAM, and is aimed to be used for everything from desktops and notebooks, to servers, netbooks and mobile devices. The 30nm chip is expected to enter mass production in the second half of this year.
Obviously, we won’t see dramatic cuts in pricing of memory, but with so many other indicators of rising prices in the component market, this ray of sunshine is very nice.
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